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Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode IXGH48N60B3C1 VCES IC110 VCE(sat) tfi(typ) = = = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C (Limited by Leads) TC = 110C TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 5 Clamped Inductive Load TC = 25C Maximum Ratings 600 600 20 30 75 48 20 280 ICM = 120 @ VCES 300 -55 ... +150 150 -55 ... +150 W C C C C C Nm/lb.in. g V V V V A A A A A Features Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Package Advantages High Power Density Low Gate Drive Requirement Applications G = Gate E = Emitter C = Collector TAB = Collector G C ( TAB ) E 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque 300 260 1.13/10 6 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250A, VGE = 0V IC = 250A, VCE = VGE VCE = VCES, VGE = 0V TJ = 125C VCE = 0V, VGE = 20V IC = 32A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 600 3.0 5.0 V V 50 A 1.75 mA 100 nA 1.8 V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts (c) 2009 IXYS CORPORATION, All Rights Reserved DS100140A(06/09) IXGH48N60B3C1 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. 28 46 3980 VCE = 25V, VGE = 0V, f = 1MHz 190 45 115 IC = 40A, VGE = 15V, VCE = 0.5 * VCES 21 40 Inductive Load, TJ = 25C IC = 30A, VGE = 15V VCE = 480V, RG = 5 Note 2 22 26 0.45 130 116 0.66 Inductive Load, TJ = 125C IC = 30A, VGE = 15V VCE = 480V, RG = 5 Note 2 22 26 0.50 190 157 1.30 0.21 200 200 1.20 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.42 C/W C/W Dim. e P TO-247 (IXGH) Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS IC = 30A, VCE = 10V, Note 1 Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Reverse Diode (SiC) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) VF RthJC IF = 20A, VGE = 0V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1.65 1.80 2.10 V V 0.90 C/W Notes 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH48N60B3C1 Fig. 1. Output Characteristics @ 25C 80 70 60 VGE = 15V 13V 11V 300 VGE = 15V 13V 11V Fig. 2. Extended Output Characteristics @ 25C 9V 250 IC - Amperes 50 40 30 20 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 7V IC - Amperes 200 9V 150 100 7V 50 5V 0 0 2 4 6 8 10 12 14 16 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ 125C 80 70 60 VGE = 15V 13V 11V 1.4 1.3 1.2 1.1 VGE = 15V Fig. 4. Dependence of VCE(sat) on Junction Temperature 9V IC - Amperes 50 40 30 20 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 7V VCE(sat) - Normalized I C = 80A I 1.0 0.9 0.8 0.7 C = 40A 5V I C = 20A 2.8 -50 -25 0 25 50 75 100 125 150 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 3.6 TJ = 25C 3.2 I 2.8 C Fig. 6. Input Admittance 200 180 160 IC - Amperes VCE - Volts = 80A 40A 20A 140 120 100 80 60 40 20 TJ = 125C 25C - 40C 2.4 2.0 1.6 1.2 5 6 7 8 9 10 11 12 13 14 15 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VGE - Volts VGE - Volts (c) 2009 IXYS CORPORATION, All Rights Reserved IXGH48N60B3C1 Fig. 7. Transconductance 80 TJ = - 40C 70 60 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 16 VCE = 300V I C = 40A I G = 10mA Fig. 8. Gate Charge 25C 125C g f s - Siemens 40 30 20 10 0 IC - Amperes VGE - Volts 50 QG - NanoCoulombs Fig. 9. Capacitance 10,000 140 120 Fig. 10. Reverse-Bias Safe Operating Area Capacitance - PicoFarads Cies 1,000 100 IC - Amperes 80 60 40 20 0 100 Coes 100 TJ = 125C RG = 5 dV / dt < 10V / ns f = 1 MHz 10 0 5 10 15 20 25 Cres 30 35 40 200 300 400 500 600 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance for IGBT 1.00 Z (th)JC - C / W 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_48N60B3C1(5D)6-03-09 IXGH48N60B3C1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 6 Eoff 5 VCE = 480V Eon 3.0 3.5 3.0 2.5 I 3 C Fig. 13. Inductive Switching Energy Loss vs. Collector Current 3.5 Eoff VCE = 480V Eon --2.5 TJ = 125C , VGE = 15V ---- 3.0 2.5 RG = 5 , VGE = 15V Eoff - MilliJoules = 60A 1.5 Eoff - MilliJoules 4 2.0 E on - MilliJoules Eon - MilliJoules 2.0 1.5 TJ = 125C 1.0 0.5 0.0 15 20 25 30 35 40 45 50 55 60 TJ = 25C 2.0 1.5 1.0 0.5 0.0 2 I C = 30A 1.0 1 I C = 15A 5 10 15 20 25 30 35 40 45 50 0.5 0 0.0 RG - Ohms IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 4.0 3.6 3.2 2.8 Eoff VCE = 480V I 2.4 2.0 1.6 1.2 0.8 0.4 0.0 25 35 45 55 65 75 85 95 105 115 I C = 30A I C = 15A C Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 2.0 220 210 200 650 1.8 1.6 Eon ---- tfi VCE = 480V td(off) - - - - 600 550 RG = 5 , VGE = 15V TJ = 125C, VGE = 15V t d(off) - Nanoseconds Eoff - MilliJoules = 60A t f i - Nanoseconds 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 125 190 180 170 160 150 140 130 120 5 10 15 I 500 450 I C Eon - MilliJoules = 60A 400 350 I = 15A C = 30A 300 250 C 200 150 20 25 30 35 40 45 50 TJ - Degrees Centigrade RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 220 200 180 160 140 120 100 80 15 20 25 30 35 40 45 50 55 60 240 200 190 220 200 180 160 140 120 100 180 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 220 tf i VCE = 480V TJ = 125C td(off) - - - - tf i VCE = 480V I td(off) - - - - 210 200 RG = 5 , VGE = 15V RG = 5 , VGE = 15V t d(off) - Nanoseconds t d(off) - Nanoseconds t f i - Nanoseconds t f i - Nanoseconds 170 160 150 140 130 120 110 100 25 190 C = 60A, 15A 180 170 160 I C = 30A 150 140 I C = 60A, 15A 130 120 125 TJ = 25C 35 45 55 65 75 85 95 105 115 IC - Amperes TJ - Degrees Centigrade (c) 2009 IXYS CORPORATION, All Rights Reserved IXGH48N60B3C1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 120 75 80 70 60 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 32 70 tr i 100 VCE = 480V td(on) - - - I C TJ = 125C, VGE = 15V = 60A 65 60 55 50 45 tr i VCE = 480V td(on) - - - TJ = 25C, 125C 30 28 26 24 22 20 18 16 RG = 5 , VGE = 15V t d(on) - Nanoseconds t d(on) - Nanoseconds t r i - Nanoseconds t r - Nanoseconds 80 50 40 30 20 10 0 15 20 25 30 35 40 45 50 55 60 60 I C = 30A 40 35 30 40 20 I 0 5 10 15 20 25 30 35 40 45 50 C 25 = 15A 20 15 RG - Ohms IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 65 30 50 Fig. 21. Forward Current vs. Forward Voltage 55 I C = 60A tr i VCE = 480V td(on) - - - - 28 RG = 5 , VGE = 15V 26 40 TJ = 25C t d(on) - Nanoseconds t r i - Nanoseconds 45 IF - Amperes 30 TJ = 125C 35 I C = 30A 25 24 20 22 15 I 5 25 35 45 55 65 75 85 95 105 115 C 20 = 15A 18 125 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 TJ - Degrees Centigrade VF - Volts Fig. 22. Maximum Transient Thermal Impedance for Diodes 1.000 0.100 Z (th)JC - C / W 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_48N60B3C1(5D)6-03-09 |
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